Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCX70G BCX70H BCX70J BCX70K
SILICON PLANAR EPITAXIAL
TRANSISTORS
N–P–N silicon
transistors
Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation at Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz
VCE = 5 V; IC = 10 mA Noise figure at f: 1 kHz
VCE = 5 V; IC: 200 mA; B = 200 Hz RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector)
VCES VCE0 IC Ptot Tj
max. max. max. max. max.
45 V 45 V 200 mA 250 mW 150 ° C
fT typ. 250 MHz
F typ. 2 dB
VCES VCE0 VEB0
max. max. max.
45 V 45 V
5V
Continental Device India Limited
Data Sheet
Page 1 of 3
BCX70G BCX70H BCX70J BCX70K
Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature
IC max. 200 mA lB max. 50 mA Ptot max. 250 mW Tstg –55 to +150 °C Tj max. 150 ° C
THERMAL RESISTANCE From junction to ambient
Rth j–a =
500 K/W
CHARACTERISTICS Tamb: 25 °C unless otherwise specified Collector–emitter cut–off current
VBE = 0; VCE = 45 V VBE = 0; VCE = 45 V; ...