BCX70J

Elektronische Bauelemente BCX70J NPN Silicon Plastic-Encapsulate Transistor FEATURES  Low Current  Low Voltage MARKING : AJ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector   Base  Emitter SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 45 45 5 200 250 150, -55~150 UNIT V V V mA mW ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector Output Capacitance Noise Figure Gain-Bandwidth Product TEST CONDITIONS IC=10µA, IE =0 IC=2mA, IB =0 IE=1µA, IC =0 VCE=45V, VBE =0 VCE=5V, IC=10µA VCE=5V, IC=2mA VCE=1V, IC=50mA IC =10mA, IB =0.25mA IC =50mA, IB =1.25mA IC=10mA, IB=-0.25mA IC=50mA, IB=1.25mA VCE=5V, IC=2mA VCB=10V, IE =0, f =1MHz VCE=5V,IC=200µA,f=1KHZ, BW=200HZ,RS=2KΩ VCE =5V, IC=10mA,f=100MHz SYMBOL V(BR)CBO...