BCX53

PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free BCX53 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current Continuous IC Total Device Dissipation TA=25°C Junction Temperature Range PD TJ Storage Temperature Range Tstg Value -100 -80 -5.0 -1.0 500 +150 -55 to +150 Unit V V V A mW ˚C ˚C Device Marking BCX53=AH , BCX53-10=AK , BCX53-16=AL OFF CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage, IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage, IE = -10µA, IC = 0 Collector Cut-off Current, VCB = -30V, IE = 0 Emitter Cut-off Current, VEB = -5.0V, IC = 0 Symbol Min Max V(BR)CBO V(BR)CEO - -100 -80 V(BR)EBO - -5.0 ICBO - -0.1 IEBO - -0.1 Unit V V V µA µA WEITRON http://www.weitron.com.tw 1/3 12-Oct-06 BCX53 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE = -2.0V, IC = -150mA VCE = -2.0V, IC = -5.0mA VCE = -2.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -2.0V, IC = -500mA TransitionFrequence VCE = -5V, IC = -10mA, f = 100MHz BCX53 BCX53-10 BCX53-16 hFE1 63 - 250 63 - 160 100 - 250 - hFE2 63 - - hFE3 40 - - VCE(sat) - - -0.5 V VBE(ON) fT 50 - ...