BCW65

SMD Type TransistIoCrs NPN General Purpose Transistors BCW65,BCW66 Features For general AF applications. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 79 Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BCW65 BCW66 60 75 32 45 55 800 1 100 200 330 150 -65 to +150 215 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.kexin.com.cn 1 SMD Type TransistIoCrs BCW65,BCW66 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage BCW65 BCW66 BCW65 BCW66 BCW65 Collector cutoff current Emitter cutoff current BCW66 BCW65 BCW66 DC current gain * DC current gain * DC current gain * A/F hFE-grp. B/G C/H A/F hFE-grp. B/G C/H A/F hFE-grp. B/G C/H Collector-emitter saturation voltage * Base-emitter saturation voltage * Transition frequency Collector-base capacitance Emitter-base capacitance * Pulse test: t 300ìs, D = 2%. Symbol Testconditons Min Typ Max Unit V(BR)CEO IC = 10 mA, IB = 0 32 V 45 V(BR)CBO IC = 1...