STW58N60DM2AG

STW58N60DM2AG Automotive-grade N-channel 600 V, 0.052 Ω typ., 50 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code STW58N60DM2AG VDS 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab  Designed for automotive applications and AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STW58N60DM2AG Table 1: Device summary Marking 58N60DM2 Package TO-247 Packing Tube July 2015 DocID027912 Rev 2 This is information on a product in full production. 1/12 www.st.com Contents Contents STW58N60DM2AG 1 Electrical ratings............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits .......................................