N-CHANNEL MOSFET
STW45N60DM2AG
Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
Datashe...
Description
STW45N60DM2AG
Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code STW45N60DM2AG
VDS @ TJmax.
650 V
RDS(on) max.
0.093 Ω
ID
34 A
PTOT
250 W
3 2 1
TO-247
Figure 1: Internal schematic diagram
Designed for automotive applications and AEC-Q101 qualified
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Order code STW45N60DM2AG
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Table 1: Device summary Marking
45N60DM2
Package TO-247
Packing Tube
July 2015
DocID028062 Rev 1
This is information on a product in full production.
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Contents
Contents
STW45N60DM2AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 6
3 Test circuits ................................................................
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