STPSC10TH13TI

STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. . Table 1. Device summary (per diode) Symbol Value IF(AV) VRRM Tj (max.) 10 A 650 V 175 °C January 2016 This is information on a product in full production. DocID024699 Rev 3 1/8 www.st.com 8 Characteristics 1 Characteristics STPSC10TH13TI Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified, per diode) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward curre...