N-channel Power MOSFET
STP100N8F6
N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production da...
Description
STP100N8F6
N-channel 80 V, 0.008 Ω typ., 100 A, STripFET™ F6
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code VDS STP100N8F6 80 V
RDS(on)max. 0.009 Ω
ID 100 A
PTOT 176 W
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STP100N8F6
Table 1: Device summary Marking 100N8F6
Package TO-220
Packing Tube
February 2016
DocID026838 Rev 3
This is information on a product in full production.
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Contents
Contents
STP100N8F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 5
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1 TO-220 type A package information................................................ 10 4.2 TO-220 type H package information ............................................... 12
5 Re...
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