BFS20
NPN Silicon Epitaxial Planar Transistor
High frequency transistor for IF and VHF applications
Absolute Maximum Ra...
BFS20
NPN Silicon Epitaxial Planar
Transistor
High frequency
transistor for IF and VHF applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 10 V, IC = 7 mA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Base Emitter Voltage at VCE = 10 V, IC = 7 mA Transition Frequency at VCE = 10 V, IC = 5 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
VCBO VCEO VEBO
IC Ptot Tj TS
Value 30 20 4 25 200 150
- 65 to + 150
Unit V V V mA
mW OC OC
Symbol hFE
Min. 40
ICBO
-
IEBO
-
VBE -
fT 275
COB
-
Typ. -
450 1
Max. 140 100 100 0.9
-
Unit nA µA V
MHz pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/11/2006
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