BFS20

Elektronische Bauelemente BFS20 NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W Collector Current ICM : 25mA Collector-base voltage V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150O C 1 2 3 A L 3 Top View 12 VG Collector 3 1 Base 2 Emitter BS C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(on) fT Test conditions Ic= 100µA, IE=0 Ic= 100µA, IB=0 IE=100µA, IC=0 VCB=20V, IE=0 VCE=15V, IB=0 VEB=4V, IC=0 VCE=10V, IC= 7mA IC=10 mA, IB=1mA IC=7mA, VCE=10V VCE= 10V, IC=5mA f = 100MHz MIN TYP 30 20 4 40 275 MAX UNIT V V V 0.1 µA 0.1 µA 0.1 µA 120 0.3 V 0.9 V MHz Marking G11 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 1 ...