Applications
Defense & Aerospace Broadband Wireless
TGF2023-2-01
6 Watt Discrete Power GaN on SiC HEMT
Product Features
Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 71.6% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA Technology: TQGaN25 on SiC Chip Dimensions: 0.82 x 0.66 x 0.10 mm
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