MASW-011052

MASW-011052 HMIC Silicon PIN Diode SP2T Switch with Integrated Bias Network 2 - 18 GHz Rev. V2 Features  Broad Bandwidth Specified up to 18 GHz  Usable up to 26 GHz  Integrated Bias Network  Low Insertion Loss / High Isolation  Fully Monolithic  Glass Encapsulate Construction  RoHS Compliant* and 260°C Reflow Compatible Description The MASW-011052 device is a SP2T broad band switch with integrated bias networks utilizing MACOM’s patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. Ordering Information1 Part Number Package MASW-011052-14220G Die in Gel Pack MASW-011052-14220W Die in Waffle Pack 1. Die quantity varies. Functional Diagram J4 J6 J5 CC L LL C SW2 J2 SW1 J3 C CC C C J1 Pin Configuration2 Pin Function J1 Antenna J2 RFIN J3 RFIN J4 Bias of J2 J5 Bias of J3 J6 Bias Antenna 2. The exposed metallization on the chip bottom must be connected to RF, DC a...