HAT2096H

HAT2096H Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 4.2 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1234 4 G 5 D S SS 1 23 REJ03G1186-0400 (Previous: ADE-208-1431B) Rev.4.00 Sep 07, 2005 1, 2, 3 4 5 Source Gate Drain Rev.4.00 Sep 07, 2005 page 1 of 6 HAT2096H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Value 30 ±20 40 160 40 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V (BR) DSS 30 — — V (BR) GSS ±20 — — IGSS — — ±10 IDSS —— ...