JCS2N65

N R N-CHANNEL MOSFET JCS2N65 MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） 5.0 Ω Qg 15.3 nC Package    LED APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED power supplies  Crss ( 7.6pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 7.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS2N65F-O-F-N-B JCS2N65F Package TO-220MF Halogen Free Packaging NO Tube Device Weight 2.20 g(typ) ：201510B 1/8 R ABSOLUTE RATINGS (Tc=25℃) JCS2N65F Parameter Symbol － VDSS Drain-Source Voltage Drain Current-continuous ID T=25℃ T=100℃ （ 1） Drain Current – pulse IDM （note 1） Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche EAS Energy（note 2） （ 1） Avalanche Current（note IAR 1） （ 1） Repetitive Avalanche Current （note 1） EAR （ 3） Peak Diode Recovery dv/dt dv/dt （note 3） Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range T ，TJ STGB B Maximum Lead Temperature for TL Soldering Purposes * *Drain current limited by maximum junction temperature Value JCS2N65FC 650 2.0* 1.3* 6.0* ±30 120 2.0 5.4 5.5 23 0.18 -55～+150 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201510B 2/8 R ELECTRICAL CHARACTERISTICS JCS2N65F Parameter Off –Characteristics Symbol Tests conditions Min Typ Max Units － Drain-Sou...