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XBS204S17R-G

Torex Semiconductor

Schottky Barrier Diode

XBS204S17R-G Schottky Barrier Diode, 2A, 40V Type ETR1612-002a ■FEATURES Forward Voltage Forward Current Repetitive Pe...


Torex Semiconductor

XBS204S17R-G

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XBS204S17R-G Schottky Barrier Diode, 2A, 40V Type ETR1612-002a ■FEATURES Forward Voltage Forward Current Repetitive Peak Reverse Voltage : VF=0.485V (TYP.) : IF(AVE)=2A : VRM=40V ■APPLICATIONS ●Rectification ●Protection against reverse connection of battery ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 40 V Reverse Voltage (DC) VR 40 V Forward Current (Average) IF(AVE) 2 A Non Continuous Forward Surge Current*1 Junction Temperature Storage Temperature Range IFSM 50 A Tj 125 ℃ Tstg -55~+150 ℃ ■PACKAGING INFORMATION ■MARKING RULE ①②③④⑤⑥: 204S17(Product Number) ⑦⑧ : Assembly Lot Number Cathode Bar ■PRODUCT NAME SMA Unit: mm PRODUCT NAME DEVICE ORIENTATION XBS204S17R-G SMA (Halogen & Antimony free) XBS204S17R SMA * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time*2 *2:trr measurement circuit Bias Pulse Generatrix VF1 VF2 IR1 IR2 Ct trr IF=200μA IF=2A VR=20V VR=40V VR=1V , f=1MHz IF=IR=10mA , irr=1mA Device Under test Oscilloscope MIN. - - LIMITS TYP. 0.15 0.485 2.5 6 180 51 Ta=25℃ MAX. - 0.54 - 200 - UNIT V V μA μA pF ns 1/3 XBS204S17R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Forward Current vs. Forward Voltage ...




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