Document
XBS104S13R-G
Schottky Barrier Diode, 1A, 40V Type
ETR1608-003
■FEATURES
Forward Voltage
: VF=0.49V (TYP.)
Forward Current
: IF(AV)=1A
Repetitive Peak Reverse Voltage : VRM=40V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage
VRM
40 V
Reverse Voltage (DC)
VR 40 V
Forward Current (Average)
IF(AV)
1A
Non Continuous Forward Surge Current *1
IFSM
10
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55~+150
*1:Non continuous high amplitude 60Hz half-sine wave.
A
℃ ℃
■APPLICATIONS
●Rectification ●Protection against reverse connection of battery
■PACKAGING INFORMATION
■MARKING RULE
Cathode Bar
①②
①: 1 (Product Number) ②: Assembly Lot Number
SOD-323A
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104S13R-G
SOD-323A (Halogen & Antimony free)
XBS104S13R
SOD-323A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket.
Unit : mm
■ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current Inter-Terminal Capacity Reverse Recovery Time *2 *2:trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1 IF=100mA VF2 IF=1A IR VR=40V Ct VR=10V , f=1MHz trr IF=IR=10mA , irr=1mA , RL=100Ω
Bバiaイsアス
Device ダUイnオdeーrドTest
Pulse Geパneルraスtrix
A
Oscilloscope
オシロスコープ
MIN. -
LIMITS TYP. 0.34 0.49 4 35 25
Ta=25℃
MAX. -
0.54 200
-
UNIT
V V μA pF ns
IF trr
0 irr
IR
t
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XBS104S13R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
FFoorrwwaarrdd CCuurrrreenntt: IIFF((AA))
1
0.1
0.01
Ta=125℃ 75℃
25℃
-20℃
RReevveerrsseeCCuurrrreenntt: IIRR ((uμA)A)
10000 1000 100 10 1
Ta=125℃ 75℃ 25℃
0.001 0
0.2 0.4 FoFrowrawradrdVVolotaltgaege: VVF (FV(V) )
(3) Forward Voltage vs. Operating Temperature
0.6
0.6
FoFrowrawradrdVoVltolatgage:e VFV(FV()V)
IF=1A
0.4
0.5A
0.2 0.1A
0.0 -50
0.01A
0 50 100 OpOepreatriantginTgeTmepmepraetruarteu reT:aTa(℃(℃) )
150
(5) Inter-Terminal Capacity vs. Reverse Voltage
200
0.1 0
10 20 30 RReevveerrsseeVVooltlataggee: VVRR(V(V))
(4) Reverse Current vs. Operating Temperature
40
10000
1000 100
VR=40V
20V
5V
Reverse Current: IR (μA) Reverse Current IR (uA)
10
1
0.1 0
50 100 OOppeerraattininggTTeemmppeerraattuurree: TTaa(℃(℃) )
150
(6) Average Forward Current vs. Operating Temperature
2.0
AAvveerraaggee FFoorrwwaarrddCCuurrrreenntt: IIFFAAVV((AA))
I Intnetre-rT-erTemirnmialnalCaCpaapcaitciyt:yC t (Ctp (Fp)F)
150 1.5
100 1.0
50
0 0
Ta=25℃
10 20 30 ReRveevresreseVoVltoaltgaeg:eV RV(RV()V)
40
0.5
0.0 0
50 100 OOppeerraattiinngg TTeemmppeerraattuurree : TTaa ((℃))
150
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XBS104S13R-G
1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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