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BC337-16 Dataheets PDF



Part Number BC337-16
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description NPN Transistor
Datasheet BC337-16 DatasheetBC337-16 Datasheet (PDF)

Small Signal Product BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor NPN Transistor FEATURES - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: TO-92 small outline plastic package - Terminal: Matte tin.

  BC337-16   BC337-16



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Small Signal Product BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor NPN Transistor FEATURES - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: TO-92 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 190 mg (approximately) TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Total Power dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Junction and Storage Temperature Range BC337 BC338 BC337 BC338 BC337 BC338 PTOT VCBO VCEO VEBO IC ICM TJ , TSTG 625 50 30 45 25 5 5 800 1000 -55 to +150 PARAMETER Collector-Base Breakdown Voltage BC337 BC338 IC= 100μA Collector-Emitter Breakdown Voltage BC337 BC338 IC= 2mA Emitter-Base Breakdown Voltage BC337 BC338 IE= 100μA Collector Base Cutoff Current Collector Emitter Saturation Voltage Base Emitter On Voltage BC337 BC338 VCB=50V VCB=30V IC=500mA, IB=50mA VCE=1V, IC=300mA Transition Frequency VCE=5V, IC=10mA, f=50MHz Output Capacitance DC Current Gain VCB=10V, f=1MHz Current Gain Group: -16 -25 -40 VCE= 5V, IC= 100mA VCE= 5V, IC= 300mA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(on) fT Cob hFE MIN 50 30 45 25 5 5 - 100 12 100 160 250 60 MAX - - - 100 100 0.7 1.2 - 250 400 630 - UNIT mW V V V mA mA °C UNIT V V V nA V V MHz pF V Document Number: DS_S1407004 Version: B14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Ic(mA), COLLECTOR CURRENT FIG.1 STATIC CHARACTERSTIC 1000 10 9 800 8 7 6 600 5 400 200 COMMON EMITTER Ta=25℃ 4 3 2 IB=1mA 0 0 0 10 20 30 VCE(V), COLLECTOR EMITTER VOLTAGE 40 BASE-EMITTER VOLTAGE VBE(V) 0 0.2 0.4 0.6 0.8 1 0.8 FIG.3 STATIC CHARACTERSTIC COMMON EMITTER Ta=25℃ VCE=1V 0.6 0.4 0.2 BASE CURRENT IB(mA) 0 1200 1000 800 600 400 200 0 0 FIG.5 IC - VCE(LOW VOLTAGE REGION) 76 COMMON EMITTER VCE=1V 8 IB=1mA 12345 VCE(V), COLLECTOR EMITTER VOLTAGE 5 4 3 2 0 6 Ic(mA), COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) DC CURRENT GAIN hFE Ic(mA), COLLECTOR CURRENT BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor 1000 800 600 400 200 0 0.8 FIG.2 STATIC CHARACTERSTIC COMMON EMITTER Ta=25℃ VCE=1V 0.6 0.4 0.2 BASE CURRENT IB(mA) 0 1000 100 FIG. 4 hFE - IC Ta= 100℃ COMMON EMITTER VCE=1V Ta= 25℃ 10 1 Ta= -25℃ 10 100 Ic(mA), COLLECTOR CURRENT 1000 FIG. 6 VCE(sat) - IC 1 COMMON EMITTER IC / IB = 25 Ta= -25℃ Ta= 100℃ 0.1 Ta= 25℃ Ta= 100℃ 0.01 1 10 100 Ic(mA), COLLECTOR CURRENT 1000 Document Number: DS_S14070.


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