Document
Small Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MECHANICAL DATA
- Case: TO-92 small outline plastic package - Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Weight: 190 mg (approximately)
TO-92
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Total Power dissipation Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Peak Collector Current Junction and Storage Temperature Range
BC337 BC338 BC337 BC338 BC337 BC338
PTOT VCBO
VCEO
VEBO IC ICM
TJ , TSTG
625 50 30 45 25 5 5 800 1000 -55 to +150
PARAMETER
Collector-Base Breakdown Voltage
BC337 BC338
IC= 100μA
Collector-Emitter Breakdown Voltage BC337 BC338
IC= 2mA
Emitter-Base Breakdown Voltage
BC337 BC338
IE= 100μA
Collector Base Cutoff Current
Collector Emitter Saturation Voltage Base Emitter On Voltage
BC337 BC338
VCB=50V VCB=30V IC=500mA, IB=50mA VCE=1V, IC=300mA
Transition Frequency
VCE=5V, IC=10mA, f=50MHz
Output Capacitance DC Current Gain
VCB=10V, f=1MHz
Current Gain Group: -16
-25 -40
VCE= 5V, IC= 100mA
VCE= 5V, IC= 300mA
SYMBOL V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO VCE(sat) VBE(on)
fT Cob
hFE
MIN 50 30 45 25 5 5 -
100
12 100 160 250
60
MAX -
-
-
100 100 0.7 1.2
-
250 400 630
-
UNIT mW
V
V
V mA mA °C
UNIT V
V
V
nA V V MHz pF
V
Document Number: DS_S1407004
Version: B14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Ic(mA), COLLECTOR CURRENT
FIG.1 STATIC CHARACTERSTIC
1000 10 9
800 8 7 6
600 5
400
200
COMMON EMITTER Ta=25℃
4 3
2
IB=1mA
0 0
0 10 20 30
VCE(V), COLLECTOR EMITTER VOLTAGE
40
BASE-EMITTER VOLTAGE VBE(V)
0 0.2 0.4 0.6 0.8
1 0.8
FIG.3 STATIC CHARACTERSTIC
COMMON EMITTER Ta=25℃
VCE=1V
0.6 0.4 0.2 BASE CURRENT IB(mA)
0
1200 1000
800 600 400 200
0 0
FIG.5 IC - VCE(LOW VOLTAGE REGION)
76
COMMON EMITTER VCE=1V
8
IB=1mA
12345 VCE(V), COLLECTOR EMITTER VOLTAGE
5 4 3 2
0
6
Ic(mA), COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
DC CURRENT GAIN hFE
Ic(mA), COLLECTOR CURRENT
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
1000 800 600 400 200 0 0.8
FIG.2 STATIC CHARACTERSTIC
COMMON EMITTER Ta=25℃
VCE=1V
0.6 0.4 0.2 BASE CURRENT IB(mA)
0
1000 100
FIG. 4 hFE - IC
Ta= 100℃
COMMON EMITTER VCE=1V
Ta= 25℃
10 1
Ta= -25℃
10 100 Ic(mA), COLLECTOR CURRENT
1000
FIG. 6 VCE(sat) - IC
1 COMMON EMITTER IC / IB = 25
Ta= -25℃
Ta= 100℃
0.1 Ta= 25℃
Ta= 100℃
0.01 1
10 100 Ic(mA), COLLECTOR CURRENT
1000
Document Number: DS_S14070.