RB521S-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power applications
Features • Ultra smal...
RB521S-40
SILICON EPITAXIAL PLANAR
SCHOTTKY BARRIER DIODE
for rectifying small power applications
Features Ultra small mold type Low forward voltage High reliability
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
Z
Top View Marking Code: "Z" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60Hz for Cyc.) Junction Temperature Storage Temperature Range
Symbol
VRM VR IO IFSM Tj Ts
Value 45 40 200 1 150
- 55 to + 150
Unit V V mA A OC OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage at IF = 10 mA at IF = 100 mA at IF = 200 mA
Reverse Current at VR = 10 V at VR = 40 V
Symbol VF
IR
Min.
0.16 0.31 0.41
-
Max.
0.3 0.45 0.54
20 90
Unit V
μA
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
RB521S-40
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
A C
RB521S-40
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
∠ ALL ROUND
HE D
A
SOD-523
E bp
UNIT A b p C D E HE V
mm
0.70 0.60
0.4 0.135 1.25 0.85 0.3 0.127 1.15 0.75
1.7 1.5
0.1
∠
5O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, St...