MMBT5551

MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts FEATURES NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 300mA Lead free in comply with EU RoHS 2002/95/EC directives. Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: M51 C 0.120(3.04) 0 . 11 0 ( 2 . 8 0 ) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0 .004 (0.10 ) 0 .000 (0.00 ) 0 .020 (0.50 ) 0 .013 (0.35 ) 0.008(0.20) 0.003(0.08) 0. 044(1 .10) 0. 035(0 .90) 0.006(0.15)MIN. BE ABSOLUTE MAXIMUM RATINGS (TA=25oC unless otherwise noted) PAR AMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Continuous S YMBOL VCEO VCBO V EBO IC THERMAL CHARACTERISTICS (TA=25oC unless otherwise noted) PAR AME T E R Max Power Dissipation (Note 1) Thermal Resistance ,Junction to Ambient (Note 1) Op e r a ti ng J unc ti o n Te mp e r a tur e a nd S to r a g e Te m p e ra tur e Ra ng e NOTES: 1.Mounted on FR-4 PCB, single sided copper, mini pad. S YM B O L PD R J A TJ,TSTG VA L U E 160 180 6 300 U N ITS V V V mA VAL U E 250 325 -55 to +150 UNITS mW OC / W OC October 24,2012-REV.00 PAGE . 1 MMBT5551 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) PARAMETER Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitte...