MMBT5550

MMBT5550 NPN General Purpose Amplifier MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. August 2005 3 2 1 SOT-23 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature 140 160 6.0 600 -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IEBO Emitter Cutoff Current On Characteristics hFE DC Current Gain VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10mA, IC = 0 VCB = 100V, IE = 0 VCB = 100V, IE = 0, Ta = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10m...