MMBT5551

High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) 1.0 , -100 , 10 , (3) MMBT5550 MMBT5551 MMBT5550 MMBT5551 WEITRON http://www.weitron.com.tw 140 160 160 180 6.0 MMBT5550 MMBT5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS Collector Cutoff Current ( VCB ( VCB ( VCB ( VCB 100 Vdc,IE= 120 Vdc, IE= 100 Vdc,IE= 100 Vdc,IE= ) ) ,TA= 100 C ) ,TA= 100 C ) Emitter Cutoff Current ( VEB 4.0Vdc, IC=0 ) MMBT5550 MMBT5551 MMBT5550 MMBT5551 I CBO I EBO Max 100 50 100 50 50 Unit nAdc uAdc nAdc ON CHARACTERISTICS DC Current Gain (IC=1.0 mAdc, VCE=5.0 Vdc) (IC=10 mAdc, VCE=5.0 Vdc) (IC=50 mAdc, VCE=5.0 Vdc) Collector-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) (IC=50 mAdc, IB=5.0mAdc) MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 Base-Emitter Saturation Voltage (IC=10 mAdc, IB=1.0mAdc) (IC=50 mAdc, IB=5.0mAdc) Both Types MMBT5550 MMBT5551 1. FR-5=1.0 x 0.75 x 0.062 in 2. Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0% hFE VCE(sat) VBE(sat) 60 80 60 80 20 30 - - - - 250 250 - Vdc 0.15 0.25 0.20 Vdc 1.0 1.2 1.0 WEITRON http://www.weitron.com.tw hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBT5550 MMBT5551 500 300 200 100 50 ...