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S1B Dataheets PDF



Part Number S1B
Manufacturers LGE
Logo LGE
Description Surface Mount Rectifiers
Datasheet S1B DatasheetS1B Datasheet (PDF)

S1A-S1M 1.0AMP.Surface Mount Rectifiers SMA/DO-214AC Features For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: 260oC / 10 seconds at terminals Mechanical Data Case: Molded plastic Polarity: Indicated by cathode band Packaging: 12mm tape W eight: 0.064 gram Dimensions in inches a.

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S1A-S1M 1.0AMP.Surface Mount Rectifiers SMA/DO-214AC Features For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: 260oC / 10 seconds at terminals Mechanical Data Case: Molded plastic Polarity: Indicated by cathode band Packaging: 12mm tape W eight: 0.064 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol S1A S1B S1D S1G S1J Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =110 oC VRRM VRMS VDC I(AV) 50 100 200 400 600 35 70 140 280 420 50 100 200 400 600 1.0 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 40 Maximum Instantaneous Forward Voltage @ 1.0A Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=125 oC VF IR 1.1 1.0 50 Typical Reverse Recovery Time (Note 1) Trr 1.5 Typical Junction Capacitance ( Note 2 ) Cj 12 Non-Repetitive Peak Reverse Avalanche Engergy at 25oC, IAS=1A, L=10mH Typical Thermal Resistance (Note 3) Operating Temperature Range EAS RθJL RθJA TJ 5 27 75 -55 to +150 Storage Temperature Range TSTG -55 to +150 Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas. S1K 800 560 800 S1M 1000 700 1000 30 30 85 Units V V V A A V uA uA uS pF mJ oC/W oC oC http://www.luguang.cn mail:[email protected] S1A-S1M 1.0AMP.Surface Mount Rectifiers RATINGS AND CHARACTERISTIC CURVES (S1A THRU S1M) AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 LEAD TEMPERATURE. (oC) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 INSTANTANEOUS REVERSE CURRENT. ( A) FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 10 1 0.1 0.01 Tj=1250C Tj=750C Tj=250C PEAK FORWARD SURGE CURRENT. (A) JUNCTION CAPACITANCE.(pF) 50 20 S1A-S1K 10 S1M 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 5 8.3ms Single 2 Half Sine Wave Tj=Tj max 1 12 5 10 20 NUMBER OF CYCLES AT 60Hz 50 FIG.4- TYPICAL JUNCTION CAPACITANCE 100 100 FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 50 20 10 5 INSTANTANEOUS FORWARD CURRENT. (A) 50 Tj=250C f=1.0MHz Vsig=50mVp-p 20 10 5 2 1 0.5 0.2 0.1 0.05 2 0.02 1 0.01 0.1 1 REVERSE VOLTAGE. (V) 10 100 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) 1.8 2.0 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE (+) 50Vdc (approx) (-) DUT 1W OSCILLOSCOPE NON (NOTE 1) INDUCTIVE (-) PULSE GENERATOR (NOTE 2) (+) +0.5A 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms http://www.luguang.cn -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: E08 mail:[email protected] .


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