D882S

Elektronische Bauelemente D882S NPN Plastic Encapsulated Transistor FEATURES  Power Dissipation RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free GH TO-92 CLASSIFICATION OF hFE Rank Range R 60-120 0 100-200 Y 160-320 GR 200-400 J AD B K E CF REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Emitter   Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 40 30 6 3 625 150, -55~150  Base UNIT V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT 40 30 6 60 50 - -V - -V - -V - 1 μA - 10 μA - 1 μA - 400 - 0.5 V - 1.5 V - - MHz TEST CONDITION IC=100 μA, IE = 0 A IC=10 mA, IB = 0 A IE=100 μA, IC = 0A VCB=40 V, IE = 0 A VCE=30 V, IB = 0 A VEB=6 V, IC =0 A VCE=2 V, IC=1 A...