Silicon N-Channel MOSFET
HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G0179-0200Z (Previous ADE-208-1459A(Z))
R...
Description
HAF2021(L), HAF2021(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G0179-0200Z (Previous ADE-208-1459A(Z))
Rev.2.00 Mar.05.2004
Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation (6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery)
Outline
LDPAK
D
G Gate resistor
Temperature Sensing Circuit
www.DataSheet4U.com
Latch Circuit
Gate Shut-down Circuit
S
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00, Mar.05.2004, page 1 of 8
HAF2021(L), HAF2021(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Symbol
VDSS VGSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg
Typical Operation Characteristics
Item Input voltage
Input current (Gate non shut down)
Input current (Gate shut down) Shut down temperature Gate operation voltage
Symbol VIH VIL IIH1 IIH2 IIL IIH(sd)1 IIH(s...
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