HAF2017L

HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptions This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built-in the over temperature shutdown circuit Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. Value at Tch = 25°C Symbol VDSS VGSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Rating 60 16 –2.5 20 40 20 50 150 –55 to +150 (Ta = 25°C) Unit V V V A A A W °C °C Typical Operation Characteristics Item Input voltage Input voltage Input current (Gate non shut down) Input current (Gate non shut ...