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S-LNTA7002NT1G Dataheets PDF



Part Number S-LNTA7002NT1G
Manufacturers LRC
Logo LRC
Description Small Signal MOSFET
Datasheet S-LNTA7002NT1G DatasheetS-LNTA7002NT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−89 Features • Low Gate Charge for Fast Switching • Small 1.6 X 1.6 mm Footprint • ESD Protected Gate • We declare that the material of product is ROHS compliant and halogen free. • ESDD PPrrootteecctteedd:2:105000VV • ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications • Power .

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−89 Features • Low Gate Charge for Fast Switching • Small 1.6 X 1.6 mm Footprint • ESD Protected Gate • We declare that the material of product is ROHS compliant and halogen free. • ESDD PPrrootteecctteedd:2:105000VV • ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State = 25°C VDSS VGS ID 30 "10 154 V V mA Power Dissipation (Note 1) Steady State = 25°C PD 300 mW Pulsed Drain Current tP v 10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDM TJ, TSTG ISD TL 618 −55 to 150 154 260 mA °C mA °C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) RqJA 416 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). LNTA7002NT1G S-LNTA7002NT1G SC-89 Gate 1 3 Drain Source 2 (Top View) M MARKING DIAGRAM 3 T6 12 T6 = Specific Device Code M = Month Code ORDERING INFORMATION Device Marking Shipping LNTA7002NT1G S-LNTA7002NT1G T6 3000/Tape&Reel LNTA7002NT3G S-LNTA7002NT3G T6 10000/Tape&Reel Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LNTA7002NT1G , S-LNTA7002NT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current V(BR)DSS IDSS IDSS VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 20 V, T = 85 °C Gate−to−Source Leakage Current Gate−to−Source Leakage Current Gate−to−Source Leakage Current IGSS IGSS IGSS VDS = 0 V, VGS = ±10 V VDS = 0 V, VGS = ±5 V VDS = 0 V, VGS = ±5 V T = 85 °C ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CAPACITANCES VGS(TH) RDS(on) gFS VDS = VGS, ID = 100 mA VGS = 4.5 V, ID = 154 mA VGS = 2.5 V, ID = 154 mA VDS = 3 V, ID = 154 mA Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) CISS COSS CRSS VDS = 5.0 V, f = 1 MHz, VGS = 0 V Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Drain−Source Diode Characteristics td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W Forward Diode Voltage VSD VGS = 0 V, IS = 0.154 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. Min 30 0.5 Typ Max Unit V 1.0 mA 1.0 mA ±25 mA ±1.0 mA ±1.0 mA 1.0 1.5 V 1.4 7.0 W 2.3 7.5 80 mS 11.5 10 pF 3.5 13 ns 15 98 ns 60 0.77 0.9 V Rev .O 2/5 ID, DRAIN CURRENT (AMPS) LESHAN RADIO COMPANY, LTD. LNTA7002NT1G , S-LNTA7002NT1G TYPICAL PERFORMANCE CURVES 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 VGS = 10 V 5V 2.8 V 2.4 V TJ = 25°C 2V 1.4 V 1.2 V 0.4 0.8 1.2 1.6 2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics ID, DRAIN CURRENT (AMPS) 0.2 VDS = 5 V 0.16 0.12 0.08 0.04 0 0.6 TJ = 125°C TJ = 25°C TJ = −55°C 0.8 1 1.2 1.4 1.6 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 2.5 VGS = 4.5 V 2 TJ = 125°C 2.5 TJ = 25°C 2 VGS = 2.5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 TJ = 25°C 1 TJ = −55°C 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 Figure 3. On−Resistance vs. Drain Current and Temperature 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS) 0.2 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2 1.8 ID = 0.15 A VGS = 4.5 V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −50 −25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature IDSS, LEAKAGE (nA) 1000 VGS = 0 V 100 TJ = 150°C 10 TJ = 125°C 1 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−to−Source Leakage Current vs. Voltage Rev .O 3/5 C, CAPACITANCE (pF) LESHAN RADIO COMPANY, LTD. LNTA7002NT1G , S-LNTA7002NT1G 25 Ciss 20 Crss 15 TYPICAL PERFORMANCE CURVES T.


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