Document
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−89
Features
• Low Gate Charge for Fast Switching • Small 1.6 X 1.6 mm Footprint • ESD Protected Gate • We declare that the material of product is ROHS compliant
and halogen free.
• ESDD PPrrootteecctteedd:2:105000VV • ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Applications
• Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State = 25°C
VDSS VGS ID
30 "10 154
V V mA
Power Dissipation (Note 1)
Steady State = 25°C PD
300 mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IDM
TJ, TSTG
ISD
TL
618
−55 to 150
154
260
mA °C
mA °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
416 °C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
LNTA7002NT1G S-LNTA7002NT1G
SC-89
Gate 1
3 Drain
Source 2
(Top View)
M
MARKING DIAGRAM 3
T6 12
T6 = Specific Device Code M = Month Code
ORDERING INFORMATION
Device
Marking Shipping
LNTA7002NT1G S-LNTA7002NT1G
T6
3000/Tape&Reel
LNTA7002NT3G S-LNTA7002NT3G
T6
10000/Tape&Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current
V(BR)DSS IDSS IDSS
VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 30 V VGS = 0 V, VDS = 20 V,
T = 85 °C
Gate−to−Source Leakage Current Gate−to−Source Leakage Current Gate−to−Source Leakage Current
IGSS IGSS IGSS
VDS = 0 V, VGS = ±10 V VDS = 0 V, VGS = ±5 V VDS = 0 V, VGS = ±5 V
T = 85 °C
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage Drain−to−Source On Resistance
Forward Transconductance CAPACITANCES
VGS(TH) RDS(on)
gFS
VDS = VGS, ID = 100 mA VGS = 4.5 V, ID = 154 mA VGS = 2.5 V, ID = 154 mA VDS = 3 V, ID = 154 mA
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3)
CISS COSS CRSS
VDS = 5.0 V, f = 1 MHz, VGS = 0 V
Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Drain−Source Diode Characteristics
td(ON) tr
td(OFF) tf
VGS = 4.5 V, VDS = 5.0 V, ID = 75 mA, RG = 10 W
Forward Diode Voltage
VSD VGS = 0 V, IS = 0.154 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
Min 30
0.5
Typ Max Unit
V 1.0 mA 1.0 mA
±25 mA ±1.0 mA ±1.0 mA
1.0 1.5 V 1.4 7.0
W 2.3 7.5 80 mS
11.5 10 pF 3.5
13 ns 15 98 ns 60
0.77 0.9 V
Rev .O 2/5
ID, DRAIN CURRENT (AMPS)
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
TYPICAL PERFORMANCE CURVES
0.2 0.18 0.16 0.14 0.12
0.1 0.08 0.06 0.04 0.02
0 0
VGS = 10 V 5V 2.8 V
2.4 V
TJ = 25°C 2V
1.4 V 1.2 V
0.4 0.8
1.2 1.6
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
ID, DRAIN CURRENT (AMPS)
0.2 VDS = 5 V
0.16
0.12
0.08
0.04
0 0.6
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.8 1 1.2 1.4 1.6 1.8 2 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.5 VGS = 4.5 V
2
TJ = 125°C
2.5 TJ = 25°C
2
VGS = 2.5 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
1.5
TJ = 25°C 1
TJ = −55°C
0.5 0
0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS)
0.2
Figure 3. On−Resistance vs. Drain Current and Temperature
1.5 VGS = 4.5 V
1
0.5 0
0.05 0.1 0.15 ID, DRAIN CURRENT (AMPS)
0.2
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
2
1.8
ID = 0.15 A VGS = 4.5 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0 −50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with Temperature
IDSS, LEAKAGE (nA)
1000 VGS = 0 V
100 TJ = 150°C
10 TJ = 125°C
1 0 5 10 15 20 25 30 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−to−Source Leakage Current vs. Voltage
Rev .O 3/5
C, CAPACITANCE (pF)
LESHAN RADIO COMPANY, LTD.
LNTA7002NT1G , S-LNTA7002NT1G
25 Ciss
20 Crss 15
TYPICAL PERFORMANCE CURVES
T.