CBRHDSH1-200
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DE...
CBRHDSH1-200
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-200 is a full wave bridge rectifier in a durable surface mount epoxy molded case, designed for high voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O.
MARKING CODE: CSH120
HD DIP CASE
APPLICATIONS: Input rectification for LED lighting Power over ethernet (PoE) peripherals General purpose full wave rectification
FEATURES: Low forward voltage (0.76V TYP @ 1.0A) Low leakage current (0.2μA TYP @ 200V) High current rating: 1.0A High voltage rating: 200V
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current Peak Forward Surge Current Power Dissipation Operating Junction Temperature Storage Temperature Thermal Resistance
SYMBOL VRRM VR
VR(RMS) IO
IFSM PD TJ Tstg ΘJA
200 200 140 1.0 20 1.2 -50 to +125 -50 to +150 85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR VR=200V
0.2
IR VR=200V, TA=100°C
BVR
IR=100μA
200 220
VF IF=1.0A
760
MAX 50 20
900
UNITS V V V A A W °C °C
°C/W
UNITS μA mA V mV
R1 (5-January 2012)
CBRHDSH1-200 SURFACE MOUNT
HIGH DENSITY 1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
MARKIN...