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CBRHDSH1-100

Central Semiconductor

SCHOTTKY BRIDGE RECTIFIER

CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE w w w. c e n t r a l s e m ...


Central Semiconductor

CBRHDSH1-100

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Description
CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-100 is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH110 FEATURES: Low Leakage Current (40nA TYP @ VRRM) Low Forward Voltage Drop Schottky Diodes High 1.0A Current Rating MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Average Forward Current IO Peak Forward Surge Current IFSM Power Dissipation PD Operating Junction Temperature TJ Storage Temperature Tstg Thermal Resistance ΘJA 100 100 71 1.0 20 1.2 -50 to +125 -55 to +150 85 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=100V 0.04 10 IR VR=100V, TA=50°C 1.0 IR VR=100V, TA=100°C 20 BVR IR=150μA 100 VF IF=500mA 615 700 VF IF=1.0A 690 750 CJ VR=4.0V, f=1.0MHz 230 UNITS V V V A A W °C °C °C/W UNITS μA mA mA V mV mV pF R6 (22-May 2012) CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE w w w. c e n t r a l s e m i . c o m MARKING CODE: CSH110 R6 (22-May 2012) CBRHDSH1-100 SURFACE MOUNT HIGH DENSIT...




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