BAP64-04

SMD Type Silicon PIN diode BAP64-04 Diodes Features High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz. Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation Ts = 90 storage temperature junction temperature thermal resistance from junction to soldering point SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.12.4 -0.1 Symbol VR IF Ptot Tstg Tj Rth j-s Min -65 -65 Max 175 100 250 +150 +150 220 Unit V mA mW K/W 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit forward voltage VF IF = 50 mA 0.95 1.1 V reverse leakage current VR VR = 175 V VR = 20 V 10 A 1 VR = 0; f = 1 MHz 0.52 pF diode capacitance Cd VR = 1 V; f = 1 MHz 0.37 0.5 pF VR = 20 V; f = 1 MHz 0.23 0.35 pF IF = 0.5 mA; f = 100 MHz; note 1 20 40 IF = 1 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 10 mA; f = 100 MHz; note 1 10 20 2 3.8 IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 charge carrier life time when switched from IF = 10 mA to L IR = 6mA; RL = 100 ,measured at IR = 3 mA 1.55 S series inductance LS 1.4 nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking 4Kp www.kexi...