VBT6045C-E3

www.vishay.com VBT6045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-263AB K 2 1 FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VBT6045C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 45 V 320 A 0.47 V 150 °C TO-263AB Diode variations Common cathode MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM Operating junction and storage temperature range TJ, TSTG VBT6045C 45 60 30 320 -40 to +150 UNIT V A A...