V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trenc...
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VF20120C
123
PIN 1
PIN 2
PIN 3
FEATURES
Trench MOS
Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TO-263AB K
TO-262AA K
2 1
VB20120C
PIN 1
K
PIN 2
HEATSINK
VI20120C
PIN 1
3 2 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package
2 x 10 A 120 V 120 A 0.64 V 150 °C
TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variation
Common cathode
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mou...