BC808

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V –VCES –VCE0 –ICM Ptot Tj BC807 max. 50 max. 45 max. max. max. 1000 250 150 BC808 30 V 25 V mA mW °C fT > 80 MHz Continental Device India Limited Data Sheet Page 1 of 4 BC807 BC808 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) –VCES –IC = 10 mA –VCE0 Emitter–base voltage (open collector) –VEB0 BC807 max. 50 max. 45 max. 5 BC808 30 V 25 V 5V Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 °C * Storage temperature Junction temperature –IC –ICM IEM –IB –IBM Ptot Tstg Tj max. max. max. max. max. max. max. 500 1000 1000 100 200 250 –55 to +150 150 mA mA mA mA mA mW °C °C THERMAL RESISTANCE* From junction to ambient Rth j–a = 500 K/W CHARACTERIST...