BAV20

BAV19, BAV20, BAV21 SILICON EPITAXIAL PLANAR DIODES High Voltage General Purpose Diodes Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current Total Power Dissipation Thermal Resistance, Junction to Ambient 1) Thermal Resistance, Junction to Tie-point 1) Junction Temperature Storage Temperature Range 1) Lead length 10 mm BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 at t = 1 µs at t = 100 µs at t = 1 s Symbol VRRM VR IF IFRM IFSM Ptot RθJA RθJTP Tj TS Value 120 200 250 100 150 200 250 625 9 3 1 500 375 240 175 - 65 to + 175 Unit V V mA mA A mW K/W K/W OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/06/2007 BAV19, BAV20, BAV21 Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 100V at VR = 150V at VR = 200V at VR = 100 V, TA = 150 OC at VR = 150 V, TA = 150 OC at VR = 200 V, TA = 150 OC Forward Voltage at IF = 100 mA at IF = 200 mA Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω BAV19 BAV20 BAV21 Symbol V(BR)R BAV19 BAV20 BAV21 BAV19 BAV20 BAV21 IR VF Cd trr Min. 120 200 ...