BAV20

Small Signal Product BAV19 / BAV20 / BAV21 Taiwan Semiconductor High Voltage Switching Diode FEATURES - Fast switching device (trr<4.0ns) - Through-hole device type mounting - Hermetically sealed glasss - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and leads are readily solderable - Packing code with suffix "G" means Halogen free MECHANICAL DATA - Case: DO-35 package - High temperature soldering guaranteed: 260oC/10s - Polarity: Indicated by black cathode band - Weight: 109 ± 4 mg DO-35 Hermetically Sealed Glass MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation Peak Forward Surge Current Pulse Width = 1 s , Square Wave Pulse Width = 1 μs , Square Wave PD IFSM 500 1 4 Average Forward Current Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range IO RθJA TJ , TSTG 200 300 -65 to +200 PARAMETER BAV19 Reverse Breakdown Voltage BAV20 IR = 100 μA BAV21 Forward Voltage Reverse Leakage Current Junction Capacitance IF = 100 mA IF = 200 mA BAV19 VR = 100 V BAV20 VR = 150 V BAV21 VR = 200 V VR = 0 , f = 1.0 MHz Reverse Recovery Time (Note 1) Note 1: Test condition : IF= IR= 30mA , RL=100Ω , IRR=3mA SYMBOL V(BR) VF IR CJ trr MIN 120 200 250 - - - MAX - 1.00 1.25 100 5 50 UNIT mW A mA oC/W oC UNIT V V nA pF ns Document Number: DS_S1412015 Version: D14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ ...