Surface Mount Switching Diode
BAS16H
6
WEITRON
http://www.weitron.com.tw
BAS16H
Maximum Ratings
Characteristic Reverse Voltage Forward Current
Peak ...
Description
BAS16H
6
WEITRON
http://www.weitron.com.tw
BAS16H
Maximum Ratings
Characteristic Reverse Voltage Forward Current
Peak Forward Surge Current
Symbol
VR IF IFM
BAS16H 75 200 500
Thermal Characteristics
Characteristic
Symbol
Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C
PD
Thermal Resistance Junction to Ambient
R qJA
Total Device Dissipation Alumina Substrate*2 TA=25 C
Derate Above 25 C
PD
Thermal Resistance Junction to Ambient
R qJA
Junction and Storage Temperature
TJ, Tstg
*1 ER-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in 99.5% Alumina
Max
225 1.8 556
300 2.4 417 -55 to + 150
Electrical Characteristics (TA=25 C Unless Otherwise Note)
Characteristic
Symbol
Min
Max
Off Characteristics
Reverse Breakdown Voltage (IBR=100 µAdc )
Reverse Voltage Leakage Current VR=75V VR=75V, TJ=150 C VR=25V, TJ=150 C
VBR IR
75
1.0 30.0 50.0
Unit Volts mAdc mAdc
Unit mW mW/ C C/W mW mW/ C C/W
C
Unit
Vdc
µAdc
WEITRON
http://www.weitron.com.tw
BAS16H
Off Characteristic
Characteristic Diode Capacition (VR=0, f=1.0MHz)
Forward Voltage (IF=1.0 mAdc) (IF=10 mAdc) (IF=50 mAdc) (IF=150 mAdc)
Reverse Recovery Time (Figure 1.) IF=IR=10 mAdc, VR=5.0Vdc IR(REC)=1.0 mAdc, RL=100½
Symbol CD
VF
trr
Device Marking
Item
BAS16H
Marking A6
Min
Max
Unit
2.0 PF
715 855 1000 1250
mVdc
6.0 nS
Eqivalent Circuit diagram
12
820 +10V
2.0K
100 µH 0.1µF
50 OUTPUT PULSE
GENERATOR
Figure 1. Recovery Time Equivalent Test Circuit
IF 0.1µF
tr tp 10%
t
IF
D.U....
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