Elektronische Bauelemente
B772
-3A , -40V PNP Plastic Encapsulated Transistor
FEATURES
Low frequency power amplifier...
Elektronische Bauelemente
B772
-3A , -40V
PNP Plastic Encapsulated
Transistor
FEATURES
Low frequency power amplifier High Current Low Speed Switching
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
CLASSIFICATION OF hFE
Product-Rank
B772-R
Range
60~120
B772-O 100~200
B772-Y 160~320
B772-GR 200~400
TO-126
Emitter Collector Base
A E F
N L
M K
B
H J
C D
G
REF.
A B C D E F G
Millimeter
Min. Max.
7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10
2.29 TYP.
REF.
H J K L M N
Millimeter
Min. Max.
1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
-40 -30 -6 -3 1.25 150, -55~150
Unit
V V V A W °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
-40
-
-
V IC= -100μA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
-30
-
-
V IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-6
-
-
V IE= -100μA, IC=0
Collector Cut – Off Current
ICBO - - -1 μA VCB= -40V, IE=0
Collector Cut – Off Current
ICEO - - -10 μA VCE= -30V, IB=0
Emitter Cut – Off Current
IEBO - - -1 μA VEB= -6V, IC=0
DC C...