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B772C

SeCoS

PNP Transistor

Elektronische Bauelemente B772C -3A , -40V PNP Plastic Encapsulated Transistor FEATURES  Low frequency power amplifie...


SeCoS

B772C

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Description
Elektronische Bauelemente B772C -3A , -40V PNP Plastic Encapsulated Transistor FEATURES  Low frequency power amplifier  High Current  Low Speed Switching RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-126C Emitter Collector Base CLASSIFICATION OF hFE Product-Rank B772C-R Range 60~120 B772C-O 100~200 B772C-Y 160~320 B772C-GR 200~400 REF. A B C D E F G Millimeter Min. Max. 7.80 8.20 3.00 3.40 10.80 11.20 15.30 15.70 3.90 4.10 4.04 4.24 2.28 TYP. REF. H J K L M N O Millimeter Min. Max. 0.80 1.60 0.45 0.60 0.66 0.86 1.30 1.50 1.17 1.37 3.10 3.30 2.70 2.90 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -40 -30 -6 -3 1.25 -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base-emitter saturation voltage Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Min. -40 -30 -6 60 32 - 50 Typ. - - Max. -1 -10 -1 400 -0.5 -1.5 - Unit V V V μA μA μA V V MHz Test Co...




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