Elektronische Bauelemente
B772C
-3A , -40V PNP Plastic Encapsulated Transistor
FEATURES
Low frequency power amplifie...
Elektronische Bauelemente
B772C
-3A , -40V
PNP Plastic Encapsulated
Transistor
FEATURES
Low frequency power amplifier High Current Low Speed Switching
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
TO-126C
Emitter Collector Base
CLASSIFICATION OF hFE
Product-Rank B772C-R
Range
60~120
B772C-O 100~200
B772C-Y 160~320
B772C-GR 200~400
REF.
A B C D E F G
Millimeter
Min. Max.
7.80 8.20 3.00 3.40 10.80 11.20 15.30 15.70 3.90 4.10 4.04 4.24
2.28 TYP.
REF.
H J K L M N O
Millimeter
Min. Max.
0.80 1.60 0.45 0.60 0.66 0.86 1.30 1.50 1.17 1.37 3.10 3.30 2.70 2.90
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
VCBO VCEO VEBO
IC PC TJ, TSTG
-40 -30 -6 -3 1.25 -55~150
Unit
V V V A W °C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage Base-emitter saturation voltage
Transition Frequency
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO
hFE
VCE(sat) VBE(sat)
fT
Min.
-40 -30 -6
60 32 -
50
Typ.
-
-
Max.
-1 -10 -1 400 -0.5 -1.5
-
Unit
V V V μA μA μA
V V
MHz
Test Co...