MTE130N20H8

CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE130N20H8 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 11A 156 mΩ(typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package Symbol MTE130N20H8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTE130N20H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE130N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=1mH, ID=3Amps, VDD=50V Repetitive Avalanche Energy TC=25°C Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature *Drain current ...