Dual N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Date : 2013.09.06 Page No. : 1/7
Dual N-...
Description
CYStech Electronics Corp.
Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Date : 2013.09.06 Page No. : 1/7
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
MTDNK2N6
BVDSS ID RDSON(MAX)
60V 0.51A 1.6Ω
Description
The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement Low on-resistance Small package outline Pb-free package
Equivalent Circuit
MTDNK2N6
* with gate protection diode
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
Total Power Dissipation @ TA=25 °C Linear Derating Factor
Operating Junction Temperature and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1)
VDS
VGS ID IDM Pd
Tj, Tstg Rth,ja
60 ±20 0.51 1.5 0.96 0.016 -55~+150 130
Note : 1.Surface mounted on 0.125 in² copper pad of FR-4 board. 180℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
Unit
V V A A W W / °C °C °C/W
MTDNK2N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Da...
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