MTDNK2N6

CYStech Electronics Corp. Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Date : 2013.09.06 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE MOSFET MTDNK2N6 BVDSS ID RDSON(MAX) 60V 0.51A 1.6Ω Description The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low on-resistance Small package outline Pb-free package Equivalent Circuit MTDNK2N6 * with gate protection diode The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction Temperature and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) VDS VGS ID IDM Pd Tj, Tstg Rth,ja 60 ±20 0.51 1.5 0.96 0.016 -55~+150 130 Note : 1.Surface mounted on 0.125 in² copper pad of FR-4 board. 180℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% Unit V V A A W W / °C °C °C/W MTDNK2N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C446N6 Issued Date : 2009.06.15 Revised Da...