MTDN8810T8

CYStech Electronics Corp. Spec. No. : C582T8 Issued Date : 2013.07.25 Revised Date : 2013.09.03 Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET MTDN8810T8 BVDSS ID 20V 5A RDSON@VGS=4.5V, ID=5A 17.5mΩ(typ) RDSON@VGS=2.5V,ID=2.6A 25mΩ(typ) RDSON@VGS=1.8V,ID=1A 41mΩ(typ) Description The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness and is suitable for applications such as power management of portable device. The TSSOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead plating package Equivalent Circuit MTDN8810T8 G：Gate S : Source D : Drain Ordering Information Device MTDN8810T8 Package TSSOP-8 (Pb-free lead plating package) Shipping 3000 pcs/ Tape & Reel Marking 8810TS MTDN8810T8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C582T8 Issued Date : 2013.07.25 Revised Date : 2013.09.03 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=25°C TA=70°C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID IDM PD Tj ; Tstg R...