MTDN8810AT8

CYStech Electronics Corp. Spec. No. : C779T8 Issued Date : 2014.04.15 Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET MTDN8810AT8 BVDSS ID 20V 5A RDSON@VGS=4.5V, ID=5A 17.5mΩ(typ) RDSON@VGS=2.5V,ID=2.6A 25mΩ(typ) RDSON@VGS=1.8V,ID=1A 41mΩ(typ) Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead plating package Equivalent Circuit MTDN8810AT8 G：Gate S : Source D : Drain Ordering Information Device MTDN8810AT8-0-T6-G Package TSSOP-8 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs/ Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTDN8810AT8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C779T8 Issued Date : 2014.04.15 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=25°C TA=70°C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID IDM PD Tj ; Tstg Rth,ja Limits 20 ±8 5 4 20 1 0.64 -55~+150 125 Unit V A W °C °C/W Note : 1.Surface mounted on 1 in ² copper pad of FR-4 board, t≤10sec. The value in any given application depends on t...