MTDN8233X6

CYStech Electronics Corp. Spec. No. : C911X6 Issued Date : 2013.07.12 Revised Date : 2013.07.23 Page No. : 1/10 Dual N -Channel Enhancement Mode MOSFET MTDN8233X6 BVDSS ID RDSON (TYP.) VGS=4.5V VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A VGS=3.7V, ID=5.5A VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A 20V 11A 6.0mΩ 6.0mΩ 6.2 mΩ 6.7 mΩ 7.8 mΩ Description The MTDN8233X6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×3-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×3-6L package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed ESD protected Pb-free lead plating and halogen-free package Equivalent Circuit MTDN8233X6 Outline TDFN2×3-6L G：Gate S：Source D：Drain MTDN8233X6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C911X6 Issued Date : 2013.07.12 Revised Date : 2013.07.23 Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=70 °C TA=25 °C Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) TA=70 °C TA=25 °C Operating Junction and Storage Temperature Symbol BVDSS VGS ID ID IDM PD Tj, Tstg Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10 sec 2.Pulse width limited by maximum ...