MTDN138ZS6R

CYStech Electronics Corp. N-Channel MOSFET (dual transistors) MTDN138ZS6R Spec. No. : C320S6R Issued Date : 2012.08.17 Revised Date : 2013.12.19 Page No. : 1/ 7 Features Low on-resistance High ESD capability High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free package Equivalent Circuit MTDN138ZS6R Outline SOT-363 Tr1 Tr2 Ordering Information Device MTDN138ZS6R-0-T1-G Package Shipping SOT-363 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTDN138ZS6R CYStek Product Specification CYStech Electronics Corp. Spec. No. : C320S6R Issued Date : 2012.08.17 Revised Date : 2013.12.19 Page No. : 2/ 7 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Drain Reverse Current Continuous Pulsed Power Dissipation ESD susceptibility Operating Junction and Storage Temperature Range Symbol VDSS VGSS ID IDP IDR IDRP Pd Tj ; Tstg Limits 60 ±20 200 800 200 800 300(total) 1550 -55~+150 (Note 1) (Note 1) (Note 2) (Note 3) Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 200mW per element must not be exceeded. 3. Human bod...