MTBA5N10V8

CYStech Electronics Corp. Spec. No. : C731V8 Issued Date : 2012.08.24 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10V8 BVDSS ID RDSON(TYP) VGS=10V, ID=5A VGS=4.5V, ID=5A 100V 7A 133 mΩ 140 mΩ Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and Halogen-free package Equivalent Circuit MTBA5N10V8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTBA5N10V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTBA5N10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C731V8 Issued Date : 2012.08.24 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=7A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=100℃ Operating Juncti...