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MTBA5C10V8 Dataheets PDF



Part Number MTBA5C10V8
Manufacturers CYStech
Logo CYStech
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet MTBA5C10V8 DatasheetMTBA5C10V8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10V8 BVDSS N-CH 100V ID@VGS=10V(-10V) 2.3A RDSON@VGS=10V(-10V) typ. 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ. 130mΩ P-CH -100V -1.7A 216mΩ 227mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10V8 Outline DFN3×3 G:Gate S:Source .

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CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10V8 BVDSS N-CH 100V ID@VGS=10V(-10V) 2.3A RDSON@VGS=10V(-10V) typ. 126.5mΩ RDSON@VGS=4.5V(-4.5V) typ. 130mΩ P-CH -100V -1.7A 216mΩ 227mΩ Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10V8 Outline DFN3×3 G:Gate S:Source D:Drain Pin 1 Ordering Information Device MTBA5C10V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 2/13 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits N-channel P-channel Drain-Source Breakdown Voltage BVDSS 100 -100 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V) TA=70 °C, VGS=10V (-10V) IDSM 2.3 1.8 -1.7 -1.4 Continuous Drain Current TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V) ID 3.4 2.4 -2.6 -1.8 Pulsed Drain Current * 3 IDM 10 -10 Total Power Dissipation Single device operation Single device value at dual operation TC=25°C TC=100°C PDSM PD * 1 1.5 *2 1.24 *2 3.75 1.88 Operating Junction and Storage Temperature Range Tj; Tstg -55~+175 Unit V A W °C Thermal Data Parameter Max. Thermal Resistance, Junction-to-ambient, single device operation Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Max. Thermal Resistance, Junction-to-case Symbol Rth,j-a Rth,j-c Value 84 *2 101 *2 40 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial TJ=25°C. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) 100 1 - 2.5 V VGS=0V, ID=250μA VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - 1 10 μA VDS=100V, VGS=0V VDS=100V, VGS=0V, Tj=70°C *RDS(ON) - 126.5 130.0 155 175 mΩ VGS=10V, ID=2.3A VGS=5V, ID=2A *GFS - 7 - S VDS=5V, ID=2.3A Dynamic Ciss Coss Crss - 1221 - - 31 - pF VDS=25V, VGS=0V, f=1MHz - 22 - MTBA5C10V8 CYStek Product Specification *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr - - CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 3/13 9.2 - 16.6 37.2 - ns VDS=50V, ID=1A, VGS=10V, RG=6Ω 15.6 - 18.7 - 2.7 - nC VDS=80V, ID=2.3A, VGS=10V 3.1 - 0.78 1.2 V VGS=0V, IS=2.3A 18 15.3 - ns nC IS=2.3A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS -100 -1.0 - - - - -2.5 V VGS=0, ID=-250μA VDS=VGS, ID=-250μA - ±100 nA VGS=±20V, VDS=0V - -1 -10 μA VDS=-100V, VGS=0V VDS=-10V, VGS=0V, Tj=70°C 216 227 285 295 mΩ VGS=-10V, ID=-1.5A VGS=-5V, ID=-1A 5.3 - S VDS=-5V, ID=-1.5A Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr - - 1282 - 58 - pF VDS=-25V, VGS=0V, f=1MHz 27 - 8.4 - 17.8 60.2 - ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω 18.6 - 19.1 - 3.0 - nC VDS=-80V, ID=-1.7A, VGS=-10V 3.1 - -0.82 -1.2 V VGS=0V, IS=-2.3A 16.6 13.4 - ns nC IS=-2.3A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Recommended Soldering Footprint Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 4/13 unit : mm MTBA5C10V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 5/13 Typical Characteristics : Q1( N-channel ) ID, Drain Current (A) 10 9 8 7 6 5 4 3 2 1 0 0 Typical Output Characteristics 10V, 9V, 8V, 7V, 6V, 5V, 4V VGS=3V 1 23 4 VDS, Drain-Source Voltage(V) 5 BVDSS, Normalized Drain-Source Breakdown.


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