Document
CYStech Electronics Corp.
Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10V8 BVDSS
N-CH 100V
ID@VGS=10V(-10V)
2.3A
RDSON@VGS=10V(-10V) typ. 126.5mΩ
RDSON@VGS=4.5V(-4.5V) typ. 130mΩ
P-CH -100V -1.7A 216mΩ
227mΩ
Features
• Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10V8
Outline
DFN3×3
G:Gate S:Source D:Drain
Pin 1
Ordering Information
Device
MTBA5C10V8-0-T6-G
Package
DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTBA5C10V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits N-channel P-channel
Drain-Source Breakdown Voltage
BVDSS
100
-100
Gate-Source Voltage
VGS ±20
±20
Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V) TA=70 °C, VGS=10V (-10V)
IDSM
2.3 1.8
-1.7 -1.4
Continuous Drain Current
TC=25 °C, VGS=10V (-10V) TC=100 °C, VGS=10V (-10V)
ID
3.4 2.4
-2.6 -1.8
Pulsed Drain Current * 3
IDM 10
-10
Total Power Dissipation
Single device operation Single device value at dual operation TC=25°C TC=100°C
PDSM PD * 1
1.5 *2 1.24 *2 3.75 1.88
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
Unit V A
W °C
Thermal Data
Parameter
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Max. Thermal Resistance, Junction-to-case
Symbol Rth,j-a Rth,j-c
Value 84 *2 101 *2 40
Unit °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C, t≤5s. 216°C/W when mounted on a minimum pad of 2 oz. copper. The power dissipation
PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low duty cycles to keep initial
TJ=25°C.
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS VGS(th)
100 1
-
2.5
V
VGS=0V, ID=250μA VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
1 10
μA
VDS=100V, VGS=0V VDS=100V, VGS=0V, Tj=70°C
*RDS(ON)
-
126.5 130.0
155 175
mΩ
VGS=10V, ID=2.3A VGS=5V, ID=2A
*GFS - 7 - S VDS=5V, ID=2.3A
Dynamic
Ciss Coss Crss
-
1221
-
- 31 - pF VDS=25V, VGS=0V, f=1MHz
- 22 -
MTBA5C10V8
CYStek Product Specification
*td(ON) *tr
*td(OFF) *tf *Qg
*Qgs *Qgd
Body Diode *VSD *trr *Qrr
-
-
CYStech Electronics Corp.
Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 3/13
9.2 -
16.6 37.2
-
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
15.6 -
18.7 -
2.7 - nC VDS=80V, ID=2.3A, VGS=10V
3.1 -
0.78 1.2
V VGS=0V, IS=2.3A
18 15.3
-
ns nC
IS=2.3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS VGS(th)
IGSS IDSS
*RDS(ON)
*GFS
-100 -1.0
-
-
-
-
-2.5
V
VGS=0, ID=-250μA VDS=VGS, ID=-250μA
-
±100
nA VGS=±20V, VDS=0V
-
-1 -10
μA
VDS=-100V, VGS=0V VDS=-10V, VGS=0V, Tj=70°C
216 227
285 295
mΩ
VGS=-10V, ID=-1.5A VGS=-5V, ID=-1A
5.3 - S VDS=-5V, ID=-1.5A
Dynamic
Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd
Body Diode *VSD *trr
*Qrr
-
-
1282
-
58 - pF VDS=-25V, VGS=0V, f=1MHz
27 -
8.4 -
17.8 60.2
-
ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω
18.6 -
19.1 -
3.0 - nC VDS=-80V, ID=-1.7A, VGS=-10V
3.1 -
-0.82
-1.2
V VGS=0V, IS=-2.3A
16.6 13.4
-
ns nC
IS=-2.3A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTBA5C10V8
CYStek Product Specification
CYStech Electronics Corp.
Recommended Soldering Footprint
Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 4/13
unit : mm
MTBA5C10V8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 5/13
Typical Characteristics : Q1( N-channel )
ID, Drain Current (A)
10 9 8 7 6 5 4 3 2 1 0 0
Typical Output Characteristics
10V, 9V, 8V, 7V, 6V, 5V, 4V
VGS=3V
1 23 4 VDS, Drain-Source Voltage(V)
5
BVDSS, Normalized Drain-Source Breakdown.