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MTBA5A10Q8 Dataheets PDF



Part Number MTBA5A10Q8
Manufacturers CYStech
Logo CYStech
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet MTBA5A10Q8 DatasheetMTBA5A10Q8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5A10Q8 BVDSS 100V ID 3A RDSON(MAX) 150mΩ Description The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features.

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CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5A10Q8 BVDSS 100V ID 3A RDSON(MAX) 150mΩ Description The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package Equivalent Circuit MTBA5A10Q8 Outline SOP-8 G:Gate S:Source D:Drain MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, TC=25 °C Continuous Drain Current, TC=100 °C Pulsed Drain Current (Note 1) Power Dissipation TA=25°C (Note 3) TA=100°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD Tj ; Tstg Limits 100 ±20 3 2.1 12 2.4 1.3 -55~+175 Unit V A W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) GFS *1 IGSS IDSS ID(ON) *1 *RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss 100 - - V VGS=0, ID=250μA 1 1.5 3 V VDS = VGS, ID=250μA - 8 - S VDS =5V, ID=2.5A - - ±100 nA VGS=±20 - - 1 25 μA VDS =80V, VGS =0 VDS =70V, VGS =0, Tj=125°C 3 - - A VDS =5V, VGS =10V - 125 168 150 225 mΩ VGS =10V, ID=2.5A VGS =5V, ID=2A - 18.8 - - 3.8 - nC ID=2.5A, VDS=80V, VGS=10V - 4.5 - - 15 - - 35 25 - ns VDS=50V, ID=1A,VGS=10V, RG=6Ω - 25 - - 740 - - 62 - pF VGS=0V, VDS=20V, f=1MHz - 50 - MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 3/8 Source-Drain Diode IS *1 - -3 ISM *3 - - 12 VSD *1 - - 1.3 Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. A V IF= IS, VGS=0V Ordering Information Device Package Shipping MTBA5A10Q8 SOP-8 (Pb-free lead plating & Halogen-free package) 2500 pcs / Tape & Reel Marking BA5A10 MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 4/8 MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Typical Characteristics(Cont.) Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 5/8 MTBA5A10Q8 CYStek Product Specification Reel Dimension CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 6/8 Carrier Tape Dimension MTBA5A10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 7/8 Recommended wave soldering condition Product Peak Temperature Pb-free devices 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBA5A10Q8 CYStek Product Specification SOP-8 Dimension Top View A CYStech Electronics Corp. Right side View G Marking: Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 8/8 B D Front View Part A F I CH Device Name J Date Code EK Part A L M N O 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 DIM Inches Min. Max. A 0.1850 0.2007 B 0.1457 0.1614 C 0.2283 0.2441 D 0.0500* E 0.0130 0.0201 F 0.1472 0.1527 G 0.0472 0.0638 H 0.1889 0.2007 Millimeters .


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