Document
CYStech Electronics Corp.
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA5A10Q8
BVDSS
100V
ID 3A
RDSON(MAX)
150mΩ
Description
The MTBA5A10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• RDS(ON)=150mΩ(max.)@VGS=10V, ID=2.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTBA5A10Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MTBA5A10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, TC=25 °C
Continuous Drain Current, TC=100 °C
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25°C (Note 3) TA=100°C
Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID ID IDM
PD
Tj ; Tstg
Limits
100 ±20
3 2.1 12 2.4 1.3 -55~+175
Unit V
A
W °C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5 *3 °C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1 *RDS(ON) *1
Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss
100 -
- V VGS=0, ID=250μA
1 1.5 3 V VDS = VGS, ID=250μA
- 8 - S VDS =5V, ID=2.5A
-
-
±100
nA VGS=±20
-
-
1 25
μA
VDS =80V, VGS =0 VDS =70V, VGS =0, Tj=125°C
3 - - A VDS =5V, VGS =10V
-
125 168
150 225
mΩ
VGS =10V, ID=2.5A VGS =5V, ID=2A
- 18.8 -
- 3.8 - nC ID=2.5A, VDS=80V, VGS=10V
- 4.5 -
- 15 -
-
35 25
-
ns
VDS=50V, ID=1A,VGS=10V, RG=6Ω
- 25 -
- 740 -
- 62 - pF VGS=0V, VDS=20V, f=1MHz
- 50 -
MTBA5A10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 3/8
Source-Drain Diode
IS *1
- -3
ISM *3
- - 12
VSD *1
- - 1.3
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
A V IF= IS, VGS=0V
Ordering Information
Device
Package
Shipping
MTBA5A10Q8
SOP-8 (Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Marking BA5A10
MTBA5A10Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 4/8
MTBA5A10Q8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 5/8
MTBA5A10Q8
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 6/8
Carrier Tape Dimension
MTBA5A10Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate (Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max)
100°C 150°C 60-120 seconds
150°C 200°C 60-180 seconds
Time maintained above:
−Temperature (TL) − Time (tL)
183°C 60-150 seconds
217°C 60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA5A10Q8
CYStek Product Specification
SOP-8 Dimension
Top View A
CYStech Electronics Corp.
Right side View G
Marking:
Spec. No. : C591Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 8/8
B
D Front View
Part A
F
I
CH
Device Name
J Date Code
EK
Part A L M
N O
8-Lead SOP-8 Plastic Package CYStek Package Code: Q8
DIM
Inches Min. Max.
A 0.1850 0.2007
B 0.1457 0.1614
C 0.2283 0.2441
D 0.0500*
E 0.0130 0.0201
F 0.1472 0.1527
G 0.0472 0.0638
H 0.1889 0.2007
Millimeters .