Document
CYStech Electronics Corp.
Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB4D0N03ATV8
Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package
BVDSS ID @ VGS=10V
VGS=10V, ID=15A RDSON(TYP)
VGS=4.5V, ID=12A
30V
15A 4.7mΩ 6.7mΩ
Equivalent Circuit
MTB4D0N03ATV8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device
MTB4D0N03ATV8-0-T6-G
Package DFN3×3 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25C
Continuous Drain Current @ VGS=10V, TC=100C
Continuous Drain Current @ VGS=10V, TA=25C
Continuous Drain Current @ VGS=10V, TA=70C
Pulsed Drain Current
Avalanche Energy @ L=0.1mH, ID=43A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
Total Power Dissipation
TC=100℃ TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM EAS EAR PD
PDSM Tj, Tstg
Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 2/9
Limits
30 ±20 43 27 15 12 140 *1 92.5 4.9 21 8.4 2.5 *2 1.6 *2
-55~+150
Unit V
A
mJ W C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
6 C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *2 C/W
Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in²pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.
125°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS VGS(th)
30 -
-
1 1.8 2.0
V
VGS=0V, ID=250μA VDS = VGS, ID=250μA
GFS *1
-
25
-
S VDS =5V, ID=15A
IGSS
-
-
±100
nA VGS=±20V
IDSS
- - 1 μA VDS =24V, VGS =0
- - 25
VDS =24V, VGS =0, Tj=125C
RDS(ON) *1
-
4.7 6.7
7.0 10
mΩ
VGS =10V, ID=15A VGS =4.5V, ID=12A
Dynamic
Ciss - 1511 -
Coss
- 299 -
pF VDS=15V, VGS=0V, f=1MHz
Crss - 208 -
Qg *1, 2
-
30
-
Qgs *1, 2
-
4.6
-
nC VDS=15V, VGS=10V, ID=15A
Qgd *1, 2
-
9.3
-
Rg - 4.3 - Ω VDS=0V, f=1MHz
MTB4D0N03ATV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 3/9
Characteristics (TC=25C, unless otherwise specified)
Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2
tf *1, 2
Min. Typ. Max. Unit Test Conditions
-8-
-
11 28
-
ns VDS=15V, ID=15A, VGS=10V, RGS=3Ω
- 13 -
Source-Drain Diode
IS *1
- -4
ISM *3
- - 16
VSD *1
- 0.81 1.2
trr - 14 -
Qrr - 7 -
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
A
V ns nC
IS=15A, VGS=0V IF=15A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB4D0N03ATV8
unit : mm
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 4/9
Typical Characteristics
Typical Output Characteristics 140
120 10V,9V,8V,7V,6V,5V
ID, Drain Current (A)
100 VGS=4V
80
60 VGS=3.5V
40 20 VGS=3V
0
0 12 34 5 VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
100 VGS=3V
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Junction Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage 1.2
VGS=0V 1
Tj=25°C
0.8
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State Resistanc e(mΩ)
10
1 0.01
VGS=4.5V
VGS=10V
0.1 1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
200
ID=15A 160
120
80
40
0
0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(on), Normalized Static DrainSource On-State Resistance
0.6 Tj=150°C
0.4
0.2 0
4 8 12 16 IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.4 VGS=10V, ID=15A
2
1.6
1.2
0.8
0.4 RDSON @ Tj=25°C : 4.7 mΩ typ
0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
RDS(on), Static Drain-Source OnState Resistance(mΩ)
MTB4D0N03ATV8
CYStek Product Specification
VGS(th), Normalized Threshold Voltage
CYStech Electronics Corp.
Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-S.