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MTB4D0N03ATV8 Dataheets PDF



Part Number MTB4D0N03ATV8
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTB4D0N03ATV8 DatasheetMTB4D0N03ATV8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATV8 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Dynamic dv/dt rating  Repetitive Avalanche Rated  Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V VGS=10V, ID=15A RDSON(TYP) VGS=4.5V, ID=12A 30V 15A 4.7mΩ 6.7mΩ Equivalent Circuit MTB4D0N03ATV8 Outline Pin 1 DFN3×3 .

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CYStech Electronics Corp. Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB4D0N03ATV8 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Dynamic dv/dt rating  Repetitive Avalanche Rated  Pb-free lead plating and halogen-free package BVDSS ID @ VGS=10V VGS=10V, ID=15A RDSON(TYP) VGS=4.5V, ID=12A 30V 15A 4.7mΩ 6.7mΩ Equivalent Circuit MTB4D0N03ATV8 Outline Pin 1 DFN3×3 G:Gate D:Drain S:Source Ordering Information Device MTB4D0N03ATV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB4D0N03ATV8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25C Continuous Drain Current @ VGS=10V, TC=100C Continuous Drain Current @ VGS=10V, TA=25C Continuous Drain Current @ VGS=10V, TA=70C Pulsed Drain Current Avalanche Energy @ L=0.1mH, ID=43A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM EAS EAR PD PDSM Tj, Tstg Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 2/9 Limits 30 ±20 43 27 15 12 140 *1 92.5 4.9 21 8.4 2.5 *2 1.6 *2 -55~+150 Unit V A mJ W C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 6 C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 *2 C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in²pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. Characteristics (TC=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) 30 - - 1 1.8 2.0 V VGS=0V, ID=250μA VDS = VGS, ID=250μA GFS *1 - 25 - S VDS =5V, ID=15A IGSS - - ±100 nA VGS=±20V IDSS - - 1 μA VDS =24V, VGS =0 - - 25 VDS =24V, VGS =0, Tj=125C RDS(ON) *1 - 4.7 6.7 7.0 10 mΩ VGS =10V, ID=15A VGS =4.5V, ID=12A Dynamic Ciss - 1511 - Coss - 299 - pF VDS=15V, VGS=0V, f=1MHz Crss - 208 - Qg *1, 2 - 30 - Qgs *1, 2 - 4.6 - nC VDS=15V, VGS=10V, ID=15A Qgd *1, 2 - 9.3 - Rg - 4.3 - Ω VDS=0V, f=1MHz MTB4D0N03ATV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 3/9 Characteristics (TC=25C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Min. Typ. Max. Unit Test Conditions -8- - 11 28 - ns VDS=15V, ID=15A, VGS=10V, RGS=3Ω - 13 - Source-Drain Diode IS *1 - -4 ISM *3 - - 16 VSD *1 - 0.81 1.2 trr - 14 - Qrr - 7 - Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. A V ns nC IS=15A, VGS=0V IF=15A, dIF/dt=100A/μs Recommended Soldering Footprint MTB4D0N03ATV8 unit : mm CYStek Product Specification CYStech Electronics Corp. Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 4/9 Typical Characteristics Typical Output Characteristics 140 120 10V,9V,8V,7V,6V,5V ID, Drain Current (A) 100 VGS=4V 80 60 VGS=3.5V 40 20 VGS=3V 0 0 12 34 5 VDS, Drain-Source Voltage(V) 1000 Static Drain-Source On-State resistance vs Drain Current 100 VGS=3V BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Junction Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=0V 1 Tj=25°C 0.8 VSD, Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistanc e(mΩ) 10 1 0.01 VGS=4.5V VGS=10V 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 ID=15A 160 120 80 40 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(on), Normalized Static DrainSource On-State Resistance 0.6 Tj=150°C 0.4 0.2 0 4 8 12 16 IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture 2.4 VGS=10V, ID=15A 2 1.6 1.2 0.8 0.4 RDSON @ Tj=25°C : 4.7 mΩ typ 0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source OnState Resistance(mΩ) MTB4D0N03ATV8 CYStek Product Specification VGS(th), Normalized Threshold Voltage CYStech Electronics Corp. Spec. No. : C441V8 Issued Date : 2014.05.22 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) 10000 Capacitance vs Drain-to-S.


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