MTB08N04J3

CYStech Electronics Corp. Spec. No. : C892J3 Issued Date : 2014.05.29 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB08N04J3 BVDSS ID @VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=5V, ID=10A 40V 60A 5.4mΩ(typ) 9.0mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit MTB08N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB08N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB08N04J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=100°C Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=18A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Sto...