MTB060N06I3

CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : 2015.05.05 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET MTB060N06I3 BVDSS ID@VGS=10V, TC=25°C RDSON(MAX)@VGS=10V, ID=10A RDSON(MAX)@VGS=5V, ID=8A 60V 16A 35mΩ(typ.) 40mΩ(typ.) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit MTB060N06I3 Outline TO-251 G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB060N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA :80 pcs / tube, 50 tubes/box Product rank, zero for no rank products Product name MTB060N06I3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS EAR PD Tj, Tstg Spec. No. : C708I3 Issued Date : 20...