BTB1184J3S

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1184J3S BVCEO IC RCESAT Spec. No. : C817J3 Issued Date : 2015.02.25 Revised Date : Page No. : 1/7 -50V -3A 130mΩ Features Low VCE(sat) Excellent current gain characteristics RoHS compliant and halogen-free package Symbol BTB1184J3S Outline TO-252(DPAK) B：Base C：Collector E：Emitter B CE Ordering Information Device BTB1184J3S-S-T3-G Package TO-252 (RoHS compliant and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTB1184J3S CYStek Product Specification CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2015.02.25 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation (TA=25℃) VCBO VCEO VEBO IC ICP Pd(TA=25℃) -60 -50 -6 -3 -7 *1 1 Power Dissipation (TC=25℃) Pd(TC=25℃) 15 *2 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating Junction and Storage Temperature Range RθJA RθJC Tj,Tstg 125 8.33 *2 -55~+150 Note : *1. Single Pulse Pw=10ms *2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger. Unit V V V A W °C/W °C Cha...